Positive bias temperature instabilities on sub-nanometer EOT FinFETs
نویسندگان
چکیده
PBTI degradation on FinFETs with HfO2/TiN gate stack (EOT < 1 nm) is studied. Thinner TiN layer decreases interfacial oxide thickness, and reduces PBTI lifetime. This behavior is consistent with the results in planar devices. Corner rounding effect on PBTI is also analyzed. Finally, charge pumping measurements on devices with several fin widths devices apparently show a higher density of defects in the top-wall high-j oxide than in the sidewall of the fin. This could explain more severe PBTI degradation. 2011 Elsevier Ltd. All rights reserved.
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ورودعنوان ژورنال:
- Microelectronics Reliability
دوره 51 شماره
صفحات -
تاریخ انتشار 2011